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Overview

The Cleanroom & Nanofabrication Facility (CNF) occupies two interconnected bays in Building E of the Calder Mesa Campus, providing 480 m² of ISO Class 5 cleanroom space and 120 m² of supporting grey space for chemical preparation, storage, and metrology. The facility was commissioned in 2011 and underwent a major tool refresh in 2021–2022.

The CNF supports the Institute's QPS and MME research groups — particularly the Integrated Photonics Lab and the Functional Materials Group — and serves a steady stream of external industrial clients in photonics, semiconductor, MEMS, and advanced materials sectors. External users access the facility either through the equipment rental booking system (CLN-2 bay bookings) or through the Scientific & Analytical Services team for a fully managed process run.

The facility is managed by Dr. Rowan Svensson-Park, Facility Manager, assisted by two cleanroom engineers (Lila Toth and Marcus Drachen). The facility is staffed 08:00–19:00 Monday to Friday; trained users with keycard access may use the facility outside these hours.

Equipment

Principal tools in the Cleanroom & Nanofabrication Facility. Booking codes are for the Facilities Portal. All tools require training sign-off before unsupervised use.
ToolCategoryKey specificationsCode
Heidelberg MLA150 Direct WriterPhotolithography150 mm wafer; 0.6 µm minimum feature; 405 nm laser; grayscale capable; alignment ±0.5 µmCNF-PL1
JEOL JBX-8100FS E-Beam LithographyE-beam lithography100 kV; 4 nm beam diameter; 300 × 300 mm stage; ±20 nm overlay accuracyCNF-EBL1
AJA International ATC 2200 SputterPVD deposition6-target magnetron sputter; DC and RF; substrate heating to 850 °C; 200 mm wafer; metals and dielectricsCNF-PVD1
Oxford Instruments Plasmalab 80 PECVDCVD depositionSiO₂, Si₃N₄, a-Si; 200 mm wafer; substrate temps 100–400 °C; dual-frequency RFCNF-CVD1
Oxford Instruments Cobra ICP-RIEReactive ion etchingFluorine, chlorine, oxygen chemistry; 200 mm wafer; 1.5:1 aspect ratio capability; endpoint detection (OES)CNF-RIE1
Trion Phantom III RIEReactive ion etchingStandard RIE; fluorine chemistry; 100 mm and 150 mm wafers; suitable for polymer and oxide etchCNF-RIE2
Signatone S-1160 Probe StationMetrology / electrical200 mm wafer; 4-probe; temperature stage −65 °C to +200 °C; Keithley SMU integrationCNF-PRB1
Filmetrics F50-EXR ReflectometerMetrology / opticalFilm thickness 2 nm–100 µm; mapping mode 300 mm wafer; 190–1100 nm spectral rangeCNF-MET1
KLA Tencor Alpha-Step D600 ProfilometerMetrology / surfaceContact stylus; 0.1 Å vertical resolution; 200 mm wafer stage; roughness and step-heightCNF-MET2
Ultrasonic Wire BonderPackagingBall and wedge bonding; 1–75 µm wire; 200 mm wafer stage; pull-test to 30 gCNF-PKG1

Process capabilities

Lithography

The CNF supports direct-write photolithography down to 0.6 µm feature size, suitable for MEMS, microfluidics, and optical device patterning. Electron-beam lithography on the JBX-8100FS achieves sub-100 nm features and is the primary tool for photonic waveguides, grating couplers, and quantum device patterning. Standard resists (AZ, S1800, PMMA, ZEP, HSQ) are stocked; specialist resists can be accommodated by arrangement.

Deposition

Physical vapour deposition covers metals (Al, Au, Ti, Cr, Ni, W, Mo, Pt), metal nitrides (TiN, TaN), and oxide dielectrics (SiO₂, Al₂O₃, HfO₂). PECVD adds silicon dioxide, silicon nitride, and amorphous silicon at lower thermal budgets suitable for polymer and flexible substrates. Atomic layer deposition (ALD) is available through an external service arrangement via the Functional Materials Group.

Etching

The ICP-RIE system handles anisotropic etching of silicon, silicon oxide, silicon nitride, III-V semiconductors, and metals using fluorine (SF₆, C₄F₈), chlorine (Cl₂, BCl₃), and oxygen chemistries. Etch depth uniformity is typically ±2% across 150 mm wafers. The standard RIE (Trion) is used for polymer ashing and oxide descum. Wet etching baths (HF, KOH, piranha, buffered oxide etch) are available in the grey-space chemical room.

Metrology

Inline metrology includes optical film thickness mapping, surface profilometry, and electrical probe testing. The facility also has access to the Advanced Microscopy Centre's AFM for post-process surface characterization. XRD and XPS measurement of deposited films can be booked through the Spectroscopy & Analytical Core. Scanning electron microscopy of processed wafers is available via the AMC (field-emission SEM, without cryo stage).

Gowning & induction

All users entering the cleanroom must complete a gowning induction before their first visit. This is non-negotiable and applies equally to internal staff, graduate students, and external users.

Gowning standard

The CNF requires a full bunny suit (coverall, hood, face mask, booties, gloves). Gowning rooms are located at both cleanroom entrances. The facility provides all consumable gowning items at no charge for registered users; regular users may purchase personal gowning equipment at the facility store discount rate.

Cosmetics, fragrances, nail varnish, loose jewellery, and contact lenses are prohibited inside the cleanroom. Users on the first two visits are accompanied by a facility engineer to confirm gowning compliance before solo access is granted.

Chemical safety

External users intending to use the wet-etch chemical room must complete an additional chemical safety assessment with Dr. Svensson-Park covering the specific chemicals in their process. This is a one-hour in-person session and must be completed before any chemical handling in the facility. Existing Veyra staff who hold a current chemical safety certificate from the Institute's Health & Safety office are exempt.

Induction process

  1. Online pre-read — complete the CNF safety module (approx. 45 minutes) via the Facilities Portal. Covers clean-room particulate control, chemical hazards, emergency procedures, and tool etiquette.
  2. In-person orientation — 90-minute walk-through of the facility with a cleanroom engineer. Covers gowning, entry/exit procedure, emergency exits, chemical storage locations, tool startup/shutdown checklists, and waste disposal.
  3. Gowning sign-off — supervised gowning and de-gowning to confirm correct technique. Signed off by the facility engineer.
  4. Tool training — separate training session(s) required for each tool class (lithography, deposition, etch, metrology) before unsupervised use. Duration varies by tool complexity: 2 hours (metrology) to 8 hours (e-beam litho).

Inductions are scheduled on Monday and Wednesday afternoons. Contact cleanroom@veyra.example to book.

ISO 5
Cleanroom classification
Class-100 equivalent
480 m²
Cleanroom floor area
Two interconnected bays
100 nm
Min. feature size
E-beam lithography (JBX-8100FS)
200 cr
External bay rate (cr/hr)
CLN-2 booking code